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Solar Grade Silicon Ingot
Targray supplies both monocrystalline and multicrystalline solar silicon ingots and bricks.
Monocrystalline wafers generally have a higher efficiency conversion rate of sunlight to electricity. However, in both monocrystalline & multicrystalline crystallization processes, feedstock quality is a critically important issue. Targray assures the highest consistency and purity of polysilicon feedstock for the supply of our solar grade ingots.
Please refer to the tables below for an example of a standard specification for our mono and multi ingot. Custom specifications are available upon request.
| Standard Specification for Monocrystalline Ingot | ||
| . | ||
| Crystal Type | Monocrystalline | |
| Dopant | p-type (Boron) | |
| Crystal Orientation | <100> +/-3° | |
| Bulk Lifetime | >10 us | |
| Resistivity | 0.5 - 3 | Ω-cm |
| 3 - 6 | ||
| Carbon Concentration | <8.0 x 1016 atoms/cm3 | |
| Oxygen Concentration | <1.0 x 1018 atoms/cm3 | |
| Growth Method | CZ | |
| Dimensions | 165 +/- 0.5 | mm |
| 200 +/- 0.5 | ||
| Ingot Segment Length | ≥200 mm | |
| Standard Specification for Multicrystalline Ingot | |
| . | |
| Crystal Structure | Multi-Crystalline Cast Silicon Ingots |
| Casting Method | Directional Solidification System (DSS) |
| Nominal Dimensions | 690 mm x 690 mm x 238 mm 840 mm x 840 mm x 260 mm |
| Nominal Weight | 265 kg
400 kg |
| Conduction Type | P-Type, boron doped |
| Specific Resistivity | 0.5 - 3 Ω-cm |
| Lifetime | >1.0 µs |
| Oxygen Concentration Interstitial | <8 x 1017 atoms/cm3 |
| Carbon Concentration Substitutional | <2 x 1016 atoms/cm3 |
We guarantee all of our materials meet the specifications quoted. Contact us today to get a competitive quote for solar grade silicon ingot.
