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Solar Grade Ingot
Monocrystalline and Multicrystalline ingots are available through Targray and are manufactured from pure virgin Polysilicon.
- Our Mono ingots are grown using the Czochralski process (CZ method).
Please refer to the tables below for an example of a standard specification for our mono and multi ingot. Custom specifications are available upon request.
Standard Specification for Monocrystalline Ingot
| Crystal type | Monocrystalline |
| Dopant | p-type (Boron) |
| Crystal orientation | <100> +/-2.5 (°) |
| Bulk Lifetime | >10 us |
| Resistivity | 3 - 6 (ohm*cm) |
| Carbon concentration | <8.0x10^16 (atoms/cm^3) |
| Oxygen concentration | <1.0x10^18 (atoms/cm^3) |
| Growth Method | CZ |
| Dimensions | 198 +/- 0.5mm (as grown) 153 +/- 0.5mm (as grown) |
| Ingot segment length | >=200mm |
| Dislocations | <3000 cm^-2 |
Standard Specification for Multicrystalline Ingot
| Crystal Structure | Multi-crystalline cast silicon ingots |
| Casting Method | Directional Solidification System (DSS) |
| Geometric Properties: | |
| Nominal Dimensions | 690 mm x 690 mm x 238 mm |
| Nominal Weight | 265 kg ± 1 kg |
| Electrical Properties: | |
| Conduction type | P-Type, boron doped |
| Specific resistivity | min. 0.5 O-cm to max. 3.0 O-cm |
| Lifetime | > 1.0 µs |
| Chemical Properties: | |
| Oxygen concentration Interstitial | < 8 x 10 17 atoms/cm3 |
| Carbon concentration Substitutional | < 2 x 10 18 atoms/cm3 |
